| PART |
Description |
Maker |
| M312L6523BTS-CAA M312L2923BTS-A2 M312L2923BTS-CAA |
64M X 72 DDR DRAM MODULE, 0.75 ns, DMA184
64M X 72 DDR DRAM MODULE, 0.8 ns, DMA184
26615150 DDR SDRAM的注册模
DDR SDRAM Registered Module
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HY5PS1G1631CLFP-Y5I HY5PS1G431CLFP-Y5I HY5PS1G1631 |
64M X 16 DDR DRAM, PBGA84
256M X 4 DDR DRAM, PBGA60
|
HYNIX SEMICONDUCTOR INC
|
| HYI25DC512160DF-6 HYI25DC512800DF-6 HYI25DC512800D |
32M X 16 DDR DRAM, 0.7 ns, PBGA60 GREEN, PLASTIC, TFBGA-60
64M X 8 DDR DRAM, 0.7 ns, PBGA60 GREEN, PLASTIC, TFBGA-60
64M X 8 DDR DRAM, 0.7 ns, PDSO66 GREEN, PLASTIC, TSOP2-66
|
Qimonda AG
|
| H5TQ1G63BFR-G7C H5TQ1G63BFR-PAC |
64M X 16 DDR DRAM, 20 ns, PBGA96
|
HYNIX SEMICONDUCTOR INC
|
| NT5DS64M8AF-6K |
64M X 8 DDR DRAM, 0.7 ns, PBGA60
|
NANYA TECHNOLOGY CORP
|
| NT5DS64M8DS-5T NT5DS64M8DS-6K |
64M X 8 DDR DRAM, 0.7 ns, PDSO66
|
NANYA TECHNOLOGY CORP
|
| K4H560838H-UC/LCC K4H561638H-UC/LCC K4H560438H-UC/ |
32M X 8 DDR DRAM, 0.7 ns, PDSO66 ROHS COMPLIANT, TSOP2-66
32M X 8 DDR DRAM, 0.75 ns, PDSO66 ROHS COMPLIANT, TSOP2-66
64M X 4 DDR DRAM, 0.75 ns, PDSO66 ROHS COMPLIANT, TSOP2-66
256Mb H-die DDR SDRAM Specification
|
Atmel, Corp.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HYS64T64900EU-3.7-B2 |
64M X 64 DDR DRAM MODULE, 0.5 ns, DMA240
|
QIMONDA AG
|
| M470T3354CZ0-E6 M470T2953CZ0-E6 M470T6554CZ0-E6 M4 |
32M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
DDR2 Unbuffered SODIMM 无缓冲DDR2内存的SODIMM
64M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
128M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| NT512D72S8PABG-75T |
64M X 72 DDR DRAM MODULE, 0.7 ns, DMA184 DIMM-184
|
Nanya Technology, Corp.
|
|
